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2SK3746 PDF预览

2SK3746

更新时间: 2024-01-20 05:42:01
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲高压局域网
页数 文件大小 规格书
4页 43K
描述
High-Voltage, High-Speed Switching Applications

2SK3746 技术参数

是否Rohs认证: 符合生命周期:End Of Life
零件包装代码:TO-3PB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:5.31雪崩能效等级(Eas):42 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1500 V
最大漏极电流 (ID):2 A最大漏源导通电阻:13 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):4 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3746 数据手册

 浏览型号2SK3746的Datasheet PDF文件第2页浏览型号2SK3746的Datasheet PDF文件第3页浏览型号2SK3746的Datasheet PDF文件第4页 
Ordering number : ENN8283  
N-Channel Silicon MOSFET  
High-Voltage, High-Speed Switching  
Applications  
2SK3746  
Features  
Low ON-resistance, low input capacitance, ultrahigh-speed switching.  
High reliability (Adoption of HVP process).  
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
1500  
±20  
2
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
4
A
DP  
2.5  
110  
150  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
42  
2
AS  
I
AV  
*1 V =99V, L=20mH, I =2A  
DD  
AV  
*2 L20mH, Single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
1500  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=1200V, V =0V  
GS  
100  
±10  
3.5  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0V  
DS  
V (off)  
GS  
=10V, I =1mA  
2.5  
0.7  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Marking : K3746  
yfs  
(on)  
=20V, I =1A  
1.4  
10  
S
D
R
I
=1A, V =10V  
13  
DS  
D GS  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62005QB MS IM TB-00001345 No.8283-1/4  

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