2SK3690-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
600
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
VDSX
ID
600
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
4.5
A
ID(puls]
VGS
IAR
±18
A
±30
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
4.5
A
Note *1
Note *2
Source(S)
EAS
261.1
mJ
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=1.8A,L= 148mH,
EAR
8
mJ
Note *3
VCC=60V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
dVDS/dt
dV/dt
PD
20
5
kV/µs
<
VDS 600V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
80
Tc=25°C
Ta=25°C
W
2.02
Operating and Storage
Temperature range
Tch
+150
-55 to +150
°C
°C
Tstg
<
<
<
Note *4:IF -ID, -di/dt = 50A/µs,VCC BVDSS,Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
ID= 250 A
VGS=0V
VDS=VGS
600
3.0
µ
V
ID= 250 A
5.0
25
µA
µA
nA
Tch=25°C
VDS=600V VGS=0V
Zero Gate Voltage Drain Current
IDSS
250
100
Tch=125°C
VDS=480V VGS=0V
VGS=±30V
VDS=0V
ID=2.25A VGS=10V
IGSS
RDS(on)
gfs
10
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
1.8
2.3
Ω
2.5
5
400
60
3
S
ID=2.25A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
600
90
5
pF
Output Capacitance
VGS=0V
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
ns
18
4
27
6
VCC=300V
ID=2.25A
30
5
45
td(off)
tf
Turn-Off Time toff
VGS=10V
7.5
RGS=10 Ω
VCC=300V
15
23
8
QG
nC
Total Gate Charge
5.5
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
ID=4.5A
3
4.5
1.50
VGS=10V
1.00
0.7
3.5
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=4.5A VGS=0V Tch=25°C
IF=4.5A VGS=0V
-di/dt=100A/µs
Tch=25°C
trr
Qrr
µs
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
1.563 °C/W
Thermal resistance
°C/W
62
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