Datasheet > 2SK3666-3-TB-E

2SK3666-3-TB-E

更新时间： 2024-11-16 12:50:47

品牌	Logo	应用领域
三洋 - SANYO		转换器放大器
页数	文件大小	规格书
6页	399K
描述
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

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数据手册

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2SK3666-3-TB-E 数据手册

2SK3666

Ordering number : EN8158B

SANYO Sem iconductors

DATA S HEET

N-Channel Junctin Silicon FET

Low-Frequency General-Purpose Ampliﬁer,

Impedance Converter Applications

2SK3666

Applications

•

Low-frequency general-purpose ampliﬁer, impedance conversion, infrared sensor applications

Features

•

Small IGSS

Small Ciss

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Symbol

Conditions

Ratings

Unit

--30

DSX

GDS

°C

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

200

150

Tstg

--55 to +150

°C

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: CP

7013A-011

• JEITA, JEDEC

: SC-59, TO-236, SOT-23, TO-236AB

•

Minimum Packing Quantity : 3,000 pcs./reel

2.9

0.1

2SK3666-2-TB-E

2SK3666-3-TB-E

2SK3666-4-TB-E

Packing Type: TL

Marking

J K

0.95

0.4

1 : Source

2 : Drain

3 : Gate

Electrical Connection

SANYO : CP

http://semicon.sanyo.com/en/network

62012 TKIM/D2805GM IMMS TB-00001984 / 31505GB TSIM TA-100303

No.8158-1/6

12 3 4 5 6

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