Datasheet > 2SK3669_06

2SK3669_06

更新时间： 2024-11-16 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关音频放大器电机驱动
页数	文件大小	规格书
6页	170K
描述
Silicon N-Channel MOS Type Switching Regulator, Audio Amplifier and Motor Drive Applications

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2SK3669_06 数据手册

2SK3669

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)

2SK3669

Switching Regulator, Audio Amplifier and Motor Drive

Applications

Unit: mm

•

Low drain-source ON-resistance: R

= 95 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 6 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 100 V)

DSS

Enhancement mode : V = 3.0 to 5.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

100

±20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Pulse (t ≤ 10 ms)

Drain current

(Note 1)

Pulse (t ≤ 1 ms)

IDP

280

JEDEC

JEITA

―

(Note 1)

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

TOSHIBA

2-7J1B

(Note 2)

Weight: 0.36 g (typ.)

Avalanche current

Repetitive avalanche energy

(Note 3)

Channel temperature

150

°C

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C/ W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 3.44 mH, I = 10 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-20

12 3 4 5 6

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与2SK3669_06相关器件

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2SK3669_09	TOSHIBA	获取价格	Switching Regulator, Audio Amplifier and Motor Drive Applications
2SK366BL	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 6MA I(DSS) \| SPAK
2SK366-BL	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig
2SK366GR	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 2.6MA I(DSS) \| SPAK
2SK366-GR	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig
2SK366V	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 10MA I(DSS) \| SPAK
2SK366-V	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig
2SK367	TOSHIBA	获取价格	N CHANNEL JUNCTION TYPE FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATION
2SK367_07	TOSHIBA	获取价格	Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current App
2SK3670	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator and DC−DC Converter Applications

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