生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.3 |
配置: | SINGLE | FET 技术: | JUNCTION |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK367O | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | SPAK | |
2SK367Y | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | SPAK | |
2SK367-Y | TOSHIBA |
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暂无描述 | |
2SK368 | TOSHIBA |
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N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER, CONSTANT CURRENT APPL | |
2SK368_07 | TOSHIBA |
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Silicon N Channel Junction Type Audio Frequency and High Voltage Amplifier Applications | |
2SK3680-01 | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3680-01_04 | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3681-01 | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3682-01 | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3683 | FUJI |
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Fuji Power MOSFET SuperFAP-G series Target Specification |