Datasheet > 2SK3667_06

2SK3667_06

更新时间： 2024-09-28 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	223K
描述
Silicon N Channel MOS Type Switching Regulator Applications

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2SK3667_06 数据手册

2SK3667

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3667

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 5.5S (typ.)

= 0.75Ω (typ.)

DS (ON)

Low leakage current: I

= 100μA (V

= 600 V)

DSS

Enhancement mode: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

600

±30

7.5

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

1: Gate

2: Drain

3: Source

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

189

JEDEC

JEITA

―

(Note 2)

SC-67

2-10U1B

Weight : 1.7 g (typ.)

Avalanche current

7.5

4.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

150

Storage temperature range

-55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.78

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C, L = 5.88 mH, I = 7.5 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-08

12 3 4 5 6

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