2SK3668

更新时间： 2024-09-27 22:52:59

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	84K
描述
SWITCHING N-CHANNEL POWER MOSFET

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中文翻译

获取价格

数据手册

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2SK3668 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3668

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

The 2SK3668 is N-channel DMOS FET device that

features a low on-state resistance, low charge and

excellent switching characteristics, designed for high

voltage applications such as high intensity discharge

lamp drive.

PART NUMBER

2SK3668-ZK

PACKAGE

TO-263 (MP-25ZK)

(TO-263)

FEATURES

• Low gate charge

Q^G= 26 nC TYP. (V^DD= 320 V, V^GS= 10 V, I^D= 10 A)

• Gate voltage rating: ±30 V

• Low on-state resistance

R^DS(on)= 0.55 Ω MAX. (V^GS= 10 V, I^D= 5.0 A)

• Surface mount package available

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

400

±30

±10

±34

1.5

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^C= 25°C)

Channel Temperature

°C

P^T2

100

150

Tch

Storage Temperature

Single Avalanche Current ^Note2

★ Single Avalanche Energy ^Note2

Tstg

–55 to +150

°C

I^AS

E^AS

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

★

2. Starting T^ch= 25°C, V^DD= 150 V, R^G= 25 Ω, V^GS= 20 → 0 V, L = 100 µH

THERMAL RESISTANCE

Channel to Case Thermal Resistance

R^th(ch-C)

1.25

83.3

°C/W

Channel to Ambient Thermal Resistane

Rth(ch-A)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16547EJ2V0DS00 (2nd edition)

Date Published April 2003 NS CP(K)

Printed in Japan

The mark ★ shows major revised points.

2002

12 3 4 5 6 7 8

中文翻译

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