Datasheet > 2SK3668

2SK3668

更新时间： 2024-11-16 06:23:23

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页数	文件大小	规格书
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描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK3668 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SK3668

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low gate charge

Q^G= 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)

Gate voltage rating: 30 V

+0.1

-0.1

0.1max

1.27

Low on-state resistance

R^DS(on)= 0.55

MAX. (VGS = 10 V, ID = 5.0 A)

+0.1

0.81

-0.1

Surface mount package available

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

400

Unit

Gate to source voltage

Drain current

I^dp*

1.5

Power dissipation

T^A=25

T^C=25

P^D

100

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

I^DSS

I^GSS

V^GS(off)

Yfs

Testconditons

Min

Typ

Max

Unit

VDS=400V,VGS=0

VGS= 30V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=5.0A

VGS=10V,ID=5.0A

100

3.5

2.5

3.0

5.6

0.4

1320

230

R^DS(on)1

Ciss

C^oss

C^rss

t^on

0.55

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

V^DS=10V,VGS=0,f=1MHZ

t^r

I^D=5.0A,VGS(on)=10V,RG=10

,VDD=150V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Q^G

V^DD= 320V

V^GS= 10 V

I^D=10A

Gate to Source Charge

Gate to Drain Charge

Q^GS

Q^GD

V^F(S-D)

t^rr

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

IF = 10 A, VGS = 0 V

di/dt = 100 A/ ìs

0.9

350

2.7

ìC

Q^rr

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