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2SK3664

更新时间： 2024-11-15 22:52:59
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管场效应晶体管光电二极管
页数 文件大小 规格书
6页 140K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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2SK3664 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：USM, SC-75, 3 PINReach Compliance Code：compliant
风险等级：5.76配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (ID)：0.5 A
最大漏源导通电阻：0.6 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK3664 数据手册

 浏览型号2SK3664的Datasheet PDF文件第2页浏览型号2SK3664的Datasheet PDF文件第3页浏览型号2SK3664的Datasheet PDF文件第4页浏览型号2SK3664的Datasheet PDF文件第5页浏览型号2SK3664的Datasheet PDF文件第6页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3664  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SK3664 is a switching device, which can be driven directly  
by a 2.5 V power source.  
+0.1  
–0  
+0.1  
0.3  
0.15  
–0.05  
The device features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such as  
power switch of portable machine and so on.  
3
0 to 0.1  
FEATURES  
• 2.5 V drive available  
2
1
• Low on-state resistance  
+0.1  
–0  
0.2  
0.5  
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.3 A)  
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.3 A)  
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)  
0.6  
0.5  
0.75 0.05  
1.0  
1.6 0.1  
ORDERING INFORMATION  
1: Source  
2: Gate  
3: Drain  
PART NUMBER  
PACKAGE  
2SK3664  
SC-75 (USM)  
Marking: G1  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage (VGS = 0 V)  
VDSS  
VGSS  
ID(DC)  
20  
±12  
±0.5  
±2.0  
0.2  
V
V
A
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
Drain  
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
ID(pulse)  
PT  
A
Body  
Diode  
Gate  
W
°C  
°C  
Tch  
Tstg  
150  
−55 to +150  
Gate  
Storage Temperature  
Protection  
Diode  
Source  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on ceramic substrate of 300 mm2 x 0.64 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with  
caution for electrostatic discharge.  
VESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16599EJ2V0DS00 (2nd edition)  
Date Published November 2004 NS CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
2003  
123456

中文翻译

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