是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 0.5 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.2 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3666 | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3666 | UTC |
获取价格 |
-30 | |
2SK3666_12 | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3666-2-TB-E | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3666-3-TB-E | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3666-4-TB-E | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3667 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type Switching Regulator Applications | |
2SK3667(Q) | TOSHIBA |
获取价格 |
暂无描述 | |
2SK3667_06 | TOSHIBA |
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Silicon N Channel MOS Type Switching Regulator Applications | |
2SK3667_10 | TOSHIBA |
获取价格 |
Switching Regulator Applications |