2SK3430-Z-AZ

更新时间： 2024-11-18 13:00:39

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中文翻译

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数据手册

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2SK3430-Z-AZ 数据手册

PRELIMINARY DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3430

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

PART NUMBER

2SK3430

The 2SK3430 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

PACKAGE

TO-220AB

TO-262

2SK3430-S

FEATURES

2SK3430-Z

TO-220SMD

• Super low on-state resistance:

★

DS(on)1

= 7.3 mΩ MAX. (V = 10 V, I = 40 A)

(TO-220AB)

DS(on)2

= 15 mΩ MAX. (V = 4 V, I = 40 A)

iss

• Low C : C = 2800 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±20

(TO-262)

±80

Note1

Drain Current (pulse)

±200

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

°C

P^T

1.5

T^ch

150

Storage Temperature

T^stg

–55 to +150

Note2

★

Single Avalanche Current

I^AS

Note2

Single Avalanche Energy

E^AS

137

(TO-220SMD)

Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %

2. Starting T^ch= 25 °C, R^G= 25 Ω, V^GS= 20 V → 0 V

THERMAL RESISTANCE

Channel to Case

Rth(ch-C)

Rth(ch-A)

1.49

83.3

°C/W

Channel to Ambient

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark ★ shows major revised points.

Document No.

Date Published March 2000 NS CP(K)

Printed in Japan

D14599EJ1V0DS00 (1st edition)

1999,2000

12 3 4

中文翻译

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