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2SK3431

更新时间: 2024-11-17 22:52:59
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
4页 51K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3431 技术参数

生命周期:Obsolete包装说明:MP-25, 3 PIN
Reach Compliance Code:unknown风险等级:5.68
雪崩能效等级(Eas):423 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):83 A最大漏源导通电阻:0.0089 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):332 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3431 数据手册

 浏览型号2SK3431的Datasheet PDF文件第2页浏览型号2SK3431的Datasheet PDF文件第3页浏览型号2SK3431的Datasheet PDF文件第4页 
PRELIMINARY DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3431  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3431  
The 2SK3431 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3431-S  
FEATURES  
2SK3431-Z  
TO-220SMD  
Super low on-state resistance:  
DS(on)1  
GS  
D
R
R
= 5.6 mMAX. (V = 10 V, I = 42 A)  
(TO-220AB)  
DS(on)2  
GS  
D
= 8.9 mMAX. (V = 4 V, I = 42 A)  
iss  
iss  
Low C : C = 6100 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
40  
±20  
V
V
(TO-262)  
±83  
A
Note1  
Drain Current (pulse)  
±332  
100  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
PT  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
65  
Note2  
Single Avalanche Current  
IAS  
Note2  
Single Avalanche Energy  
EAS  
423  
mJ  
(TO-220SMD)  
Notes 1. PW 10 µ s, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
Channel to Case  
Rth(ch-C)  
Rth(ch-A)  
1.25  
83.3  
°C/W  
°C/W  
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 2000 NS CP(K)  
Printed in Japan  
D14600EJ1V0DS00 (1st edition)  
The mark shows major revised points.  
1999, 2000  
©

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