Datasheet > 2SK3431

2SK3431

更新时间： 2024-11-18 12:53:23

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	84K
描述
Super low on-state resistance: RDS(on)1 = 5.6m MAX. (VGS= 10 V, ID = 42 A)

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中文翻译

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数据手册

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2SK3431 数据手册

SMD Type

MOSFET

Product specification

2SK3431

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

Super low on-state resistance:

R^DS(on)1= 5.6m MAX. (V^GS= 10 V, I^D= 42 A)

R^DS(on)2= 8.9 m MAX. (V^GS= 4 V, I^D= 42 A)

Low C^iss: C^iss= 6100 pF TYP.

Built-in gate protection diode

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

332

100

Power dissipation

T^C=25

T^A=25

P^D

1.5

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Y^fs

Testconditons

Min

Typ

Max

Unit

V^DS=40V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=42A

V^GS=10V,I^D=42A

V^GS=4V,I^D=42A

1.5

2.0

2.5

Forward transfer admittance

R^DS(on)1

R^DS(on)2

C^iss

4.5

5.6

8.9

Drain to source on-state resistance

6.2

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

6100

1400

700

120

1800

350

440

110

V^DS=10V,V^GS=0,f=1MHZ

C^oss

C^rss

t^on

t^r

I^D=42A,V^GS(on)=10V,R^G=10 ,V^DD=20V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

I^D=83A, V^DD=32V, V^GS= 10 V

Q^GS

Q^GD

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