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2SK3430-ZJ PDF预览

2SK3430-ZJ

更新时间: 2024-10-15 18:10:03
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 996K
描述
N-Channel MOSFET

2SK3430-ZJ 数据手册

 浏览型号2SK3430-ZJ的Datasheet PDF文件第2页 
SMD Type  
MOSFET  
N-Channel MOSFET  
2SK3430-ZJ  
Features  
VDS S = 40V  
ID = 80 A (VGS = 10V)  
RDS(ON) 7.3mΩ (VGS = 10V)  
RDS(ON) 15mΩ (VGS = 4V)  
Low Ciss: Ciss = 2800 pF TYP.  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
40  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
±20  
80  
Continuous Drain Current  
ID  
A
Pulsed Drain Current  
Single Avalanche Current (Note.2)  
Tc = 25℃  
Ta = 25℃  
(Note.1)  
I
DM  
AS  
200  
I
37  
84  
Power Dissipation  
P
D
W
mJ  
1.5  
Single Avalanche Energy (Note.2)  
Thermal Resistance.Junction- to-Ambient  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
E
AS  
137  
R
thJA  
thJC  
83.3  
1.49  
150  
/W  
R
T
J
Storage Temperature Range  
T
stg  
-55 to 150  
Note.1: PW 10 us, Duty Cycle 1 %  
Note.2: Starting TJ = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V 0 V  
1
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