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2SK3122

更新时间： 2024-10-02 22:52:55
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲
页数 文件大小 规格书
4页 123K
描述
Ultrahigh-Speed Switching Applications

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中文翻译

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2SK3122 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
Is Samacsys：N外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：3 A最大漏极电流 (ID)：3 A
最大漏源导通电阻：0.15 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-F3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：3.5 W最大脉冲漏极电流 (IDM)：12 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：FLAT
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK3122 数据手册

 浏览型号2SK3122的Datasheet PDF文件第2页浏览型号2SK3122的Datasheet PDF文件第3页浏览型号2SK3122的Datasheet PDF文件第4页 
Ordering number:ENN6105A  
N-Channel Silicon MOSFET  
2SK3122  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed switching.  
· 4V drive.  
2062A  
[2SK3122]  
4.5  
1.5  
1.6  
0.4  
0.5  
3
1
2
0.4  
1.5  
1 : Gate  
3.0  
2 : Drain  
0.75  
3 : Source  
SANYO : PCP  
(Bottom view)  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Drain-to-Source Voltage  
V
30  
±24  
3
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
12  
A
PW≤10µs, duty cycle≤1%  
Tc=25˚C  
Mounted on a ceramic board (250mm2×0.8mm)  
DP  
3.5  
1.5  
150  
W
W
˚C  
˚C  
Allowable Power Dissipation  
P
D
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
30  
max  
Drain-to-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
D GS  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
I
=30V, V =0  
10  
DSS  
DS  
GS  
DS  
DS  
GS  
I
=±16V, V =0  
DS  
=10V, I =1mA  
D
=10V, I =1.5A  
D
±10  
2.4  
GSS  
V
1.0  
1.7  
GS(off)  
| yfs |  
Forward Transfer Admittance  
2.5  
S
R
1
=1.5A, V =10V  
GS  
115  
230  
150  
320  
mΩ  
mΩ  
DS(on)  
DS(on)  
D
Static Drain-to-Source On-State Resistance  
R
2
I
=500mA, V =4V  
GS  
D
Marking : KW  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
30100TS (KOTO) TA-2497 No.6105–1/4  
1234

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