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2SK3125 PDF预览

2SK3125

更新时间: 2024-10-02 22:52:55
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 219K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

2SK3125 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Transferred包装说明:2-16H1A, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.36Is Samacsys:N
雪崩能效等级(Eas):955 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):70 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):210 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3125 数据手册

 浏览型号2SK3125的Datasheet PDF文件第2页浏览型号2SK3125的Datasheet PDF文件第3页浏览型号2SK3125的Datasheet PDF文件第4页浏览型号2SK3125的Datasheet PDF文件第5页浏览型号2SK3125的Datasheet PDF文件第6页 
                                                        
                                                        
2SK3125  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)  
2SK3125  
DC-DC Converter, Relay Drive and  
Motor Drive Applications  
Unit: mm  
·
·
·
·
Low drain-source ON resistance: R  
= 5.3 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 60 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 30 V)  
DSS  
Enhancement-model: V = 1.5~3.0 V (V  
DS  
= 10 V, I = 1 mA)  
th  
DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
30  
30  
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
±20  
70  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
210  
150  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
JEDEC  
JEITA  
D
AS  
AR  
Single pulse avalanche energy  
E
955  
mJ  
(Note 2)  
TOSHIBA  
2-16H1A  
Avalanche current  
I
70  
15  
A
Weight: 3.65 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
-55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
R
0.833  
°C/W  
th (ch-c)  
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: V = 25 V, T = 25°C, L = 140 mH, R = 25 W, I = 70 A  
DD ch AR  
G
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2002-08-23  

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