2SK3132(F)

更新时间： 2024-09-12 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动 DC-DC转换器局域网
页数	文件大小	规格书
6页	419K
描述
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,50A I(D),TO-264AA

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技术参数
数据手册

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2SK3132(F) 技术参数

是否Rohs认证：	符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	50 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	250 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

2SK3132(F) 数据手册

2SK3132

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3132

Chopper Regulator DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.07 Ω (typ.)

DS (ON)

: |Y | = 33 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.4 to 3.4 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

DCDrain current

200

250

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

—

Single pulse avalanche energy

525

(Note 2)

Avalanche current

TOSHIBA

2-21F1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 9.75 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.5

°C / W

th (ch−c)

35.7

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 357 μH, R = 25 Ω, I = 50 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK3132(F)相关器件

型号	品牌	获取价格	描述	数据表
2SK3132(Q)	TOSHIBA	获取价格	MOSFET N-CH 500V 50A TO-3P(L)
2SK3132_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applica
2SK3132_09	TOSHIBA	获取价格	Chopper Regulator DC−DC Converter and Motor Drive Applications
2SK3133	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3133(L)	HITACHI	获取价格	暂无描述
2SK3133(L)	RENESAS	获取价格	0.018 ohm, POWER, FET, LDPAK-3
2SK3133(S)	RENESAS	获取价格	0.018ohm, POWER, FET, LDPAK-3
2SK3133(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.018ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3
2SK3133L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3133S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching

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