Datasheet > 2SK3132_06

2SK3132_06

更新时间： 2024-09-12 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	712K
描述
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3132_06 数据手册

2SK3132

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3132

Chopper Regulator DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.07 Ω (typ.)

DS (ON)

: |Y | = 33 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.4~3.4 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

DCDrain current

200

250

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

525

(Note 2)

JEDEC

JEITA

—

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-21F1B

150

Weight: 9.75 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

0.5

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

35.7

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 357 μH, R = 25 Ω, I = 50 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-06

12 3 4 5 6

中文翻译

下载PDF

与2SK3132_06相关器件

型号	品牌	获取价格	描述	数据表
2SK3132_09	TOSHIBA	获取价格	Chopper Regulator DC−DC Converter and Motor Drive Applications
2SK3133	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3133(L)	HITACHI	获取价格	暂无描述
2SK3133(L)	RENESAS	获取价格	0.018 ohm, POWER, FET, LDPAK-3
2SK3133(S)	RENESAS	获取价格	0.018ohm, POWER, FET, LDPAK-3
2SK3133(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.018ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3
2SK3133L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3133S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3134	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3134	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching