Datasheet > 2SK3126_06

2SK3126_06

更新时间： 2024-01-19 15:32:55

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
3页	151K
描述
Silicon N Channel MOS Type Switching Regulator Applications

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2SK3126_06 数据手册

2SK3126

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3126

Switching Regulator Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.48 Ω (typ.)

DS (ON)

: |Y | = 7.5 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 450 V)

DSS

: V = 2.4~3.4 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

450

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

222

JEDEC

JEITA

—

(Note 2)

SC-67

2-10R1B

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Weight: 1.9 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal reverse, channel to case

Thermal reverse, channel to ambient

3.125

62.5

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 3.7 mH, R = 25 Ω, I = 10 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-06

12 3

中文翻译

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与2SK3126_06相关器件

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2SK3127	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK3127_07	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK3127_09	TOSHIBA	获取价格	Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK3128	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK3128_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK3128_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK3129	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK3129_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK313	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 12A I(D) \| TO-3
2SK3130	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Cha

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