Datasheet > 2SK3128_06

2SK3128_06

更新时间： 2024-01-01 21:40:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
3页	152K
描述
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SK3128_06 数据手册

2SK3128

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3128

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain-source ON resistance

z High forward transfer admittance

: R

= 9.5 mΩ (typ.)

DS (ON)

: |Y | = 40 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 30 V)

DSS

: V = 1.5~3.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Pulse (Note 1)

1. GATE

Drain current

2. DRAIN (HEAT SINK)

3. SOURCE

180

150

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

411

JEDEC

JEITA

―

(Note 2)

Avalanche current

1.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-16C1B

150

Weight: 4.6 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal reverse, channel to case

Thermal reverse, channel to ambient

1.0

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 82 μH, R = 25 Ω, I = 60 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-16

12 3

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与2SK3128_06相关器件

型号	品牌	获取价格	描述	数据表
2SK3128_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK3129	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK3129_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
2SK313	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 12A I(D) \| TO-3
2SK3130	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Cha
2SK3130	SUNTAC	获取价格	Power MOSFET
2SK3130_06	TOSHIBA	获取价格	Silicon N Channel MOS Type
2SK3130_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3131	TOSHIBA	获取价格	Field Effect Transistor Silicon N Channel MOS Type
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