Datasheet > 2SK3130_06

2SK3130_06

更新时间： 2024-01-25 05:44:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	193K
描述
Silicon N Channel MOS Type

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数据手册

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2SK3130_06 数据手册

2SK3130

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3130

Switching Regulator Applications

Unit: mm

•

Reverse-recovery time: t = 85 ns

Built-in high-speed flywheel diode

Low drain-source ON resistance: R

= 1.12 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 5.0 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 600 V)

DSS

Enhancement model: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

SC-67

2-10R1B

345

(Note 2)

TOSHIBA

Avalanche current

Weight: 1.9 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 16.8 mH, R = 25 Ω, I

= 6 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Please handle with caution

2006-11-08

12 3 4 5 6

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