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2SK3127_09

更新时间： 2024-01-17 03:33:44
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器电机驱动DC-DC转换器
页数 文件大小 规格书
3页 133K
描述
Chopper Regulator, DC-DC Converter and Motor Drive Applications

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中文翻译

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2SK3127_09 数据手册

 浏览型号2SK3127_09的Datasheet PDF文件第2页浏览型号2SK3127_09的Datasheet PDF文件第3页 
2SK3127  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VI)  
2SK3127  
Chopper Regulator, DC-DC Converter and Motor Drive  
Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 9.5 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 38 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement-mode: V = 1.5 to 3.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
45  
GSS  
DC (Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
135  
65  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
⎯
⎯
Single pulse avalanche energy  
E
524  
mJ  
(Note 2)  
JEITA  
Avalanche current  
I
45  
6
A
TOSHIBA  
Weight: 1.5 g (typ.)  
2-10S1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
stg  
−55 to 150  
Note 1: Please use devices on condition that the channel temperature is  
below 150°C.  
Note 2:  
V
DD  
= 25 V, T = 25°C (initial), L = 186 μH, R = 25 Ω, I  
= 45 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum junction  
temperature.  
Note 4: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic sensitive device.  
Please handle with caution.  
JEDEC  
⎯
⎯
Thermal Characteristics  
JEITA  
Characteristics  
Symbol  
Max  
Unit  
TOSHIBA  
Weight: 1.5 g (typ.)  
2-10S2B  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.92  
83.3  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
1
2009-09-29  
123

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