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2SK3127_07 PDF预览

2SK3127_07

更新时间: 2024-01-31 14:22:43
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器电机驱动DC-DC转换器
页数 文件大小 规格书
3页 161K
描述
Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications

2SK3127_07 数据手册

 浏览型号2SK3127_07的Datasheet PDF文件第2页浏览型号2SK3127_07的Datasheet PDF文件第3页 
2SK3127  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VI)  
2SK3127  
Chopper Regulator, DC-DC Converter and Motor Drive  
Applications  
Unit: mm  
Low drain-source ON resistance: R  
= 9.5 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 38 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement-mode: V = 1.5 to 3.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
45  
GSS  
DC (Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
135  
65  
DP  
Drain power dissipation  
(Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
Single pulse avalanche energy  
(Note 2)  
E
524  
mJ  
JEITA  
Avalanche current  
I
45  
6
A
TOSHIBA  
Weight: 1.5 g (typ.)  
2-10S1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Please use devices on condition that the channel temperature is  
below 150°C.  
Note 2:  
V = 25 V, T = 25°C (initial), L = 186 μH, R = 25 Ω,  
DD ch G  
I
= 45 A  
AR  
Note 3: Repetitive rating: pulse width limited by maximum junction  
temperature.  
Note 4: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings. Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual reliability  
data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic sensitive device.  
Please handle with caution.  
JEDEC  
JEITA  
Thermal Characteristics  
TOSHIBA  
Weight: 1.5 g (typ.)  
2-10S2B  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.92  
83.3  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
1
2007-03-16  

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