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2SK3125_06

更新时间： 2024-02-29 13:28:12
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器继电器电机DC-DC转换器
页数 文件大小 规格书
6页 205K
描述
Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications

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中文翻译

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2SK3125_06 数据手册

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2SK3125  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)  
2SK3125  
DC-DC Converter, Relay Drive and  
Unit: mm  
Motor Drive Applications  
•
•
•
•
Low drain-source ON resistance: R  
= 5.3 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 60 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement model: V = 1.5~3.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
70  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
210  
150  
DP  
JEDEC  
JEITA  
―
―
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
E
955  
mJ  
(Note 2)  
TOSHIBA  
2-16H1A  
Avalanche current  
I
70  
15  
A
Weight: 3.65 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
R
0.833  
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C, L = 140 μH, R = 25 Ω, I = 70 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2006-11-16  
123456

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