是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.1 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3107C | RENESAS |
获取价格 |
N-CHANNEL MOSFET FOR SWITCHING | |
2SK3107C-T1-A | RENESAS |
获取价格 |
N-CHANNEL MOSFET FOR SWITCHING | |
2SK3107C-T1-AT | RENESAS |
获取价格 |
N-CHANNEL MOSFET FOR SWITCHING | |
2SK3107-T2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416 | |
2SK3107-T2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416 | |
2SK3108 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3108-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK3109 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3109 | KEXIN |
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MOS Field Effect Transistor | |
2SK3109 | TYSEMI |
获取价格 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 |