2SK3109

更新时间： 2024-01-23 08:17:07

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	79K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

获取价格

技术参数
数据手册

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2SK3109 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	10 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

2SK3109 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3109

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

The 2SK3109 is N channel MOS FET device that

features a low on-state resistance and excellent

switching characteristics, and designed for high voltage

applications such as DC/DC converter.

PART NUMBER

2SK3109

PACKAGE

TO-220AB

TO-262

2SK3109-S

2SK3109-ZJ

TO-263

FEATURES

• Gate voltage rating ±30 V

• Low on-state resistance

R^DS(on)= 0.4 Ω MAX. (V^GS= 10 V, I^D= 5.0 A)

• Low input capacitance

C^iss= 400 pF TYP. (V^DS= 10 V, V^GS= 0 V)

• Avalanche capability rated

• Built-in gate protection diode

• Surface mount device available

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Drain to source voltage (V^GS= 0 V)

Gate to source voltage (V^DS= 0 V)

Drain current (DC) (T^C= 25 °C)

Drain current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

200

±30

±10

±30

Total power dissipation (T^A= 25 °C)

Total power dissipation (T^C= 25 °C)

Channel temperature

1.5

°C

P^T2

T^ch

150

Storage temperature

T^stg

−55 to +150

Single avalanche current ^Note2

Single avalanche energy ^Note2

I^AS

E^AS

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Starting T^ch= 25 °C, V^DD= 100 V, R^G= 25 Ω, V^GS= 20 V→0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark ★ shows major revised points.

Document No. D13332EJ1V0DS00 (1st edition)

Date Published January 2000 NS CP (K)

1998, 2000

Printed in Japan

12 3 4 5 6 7 8

中文翻译

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与2SK3109相关器件

型号	品牌	获取价格	描述	数据表
2SK3109-AZ	NEC	获取价格	Power Field-Effect Transistor, 10A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta
2SK3109-AZ	RENESAS	获取价格	2SK3109-AZ
2SK3109-S	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3109-Z	RENESAS	获取价格	2SK3109-Z
2SK3109-ZJ	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3109-ZJ-E1-AZ	RENESAS	获取价格	2SK3109-ZJ-E1-AZ
2SK311	HITACHI	获取价格	SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)
2SK3110	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3111	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3111	KEXIN	获取价格	MOS Field Effect Transistor