2SK3112

更新时间： 2024-02-03 01:15:30

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描述
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

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中文翻译

获取价格

技术参数
数据手册

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2SK3112 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SK3112 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3112

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

The 2SK3112 is N-channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

and designed for high voltage applications such as DC/DC

converter, actuator driver.

PART NUMBER

2SK3112

PACKAGE

TO-220AB

2SK3112-S

2SK3112-ZJ

TO-262

TO-263(MP-25ZJ)

FEATURES

• Gate voltage rating ±30 V

• Low on-state resistance

^DS(on)= 110 mΩ MAX. (V^GS= 10 V, I

• Low input capacitance

^iss= 1600 pF TYP. (V^DS= 10 V, V^GS= 0 V)

= 13 A)

(TO-220AB)

• Avalanche capability rated

• Built-in gate protection diode

• Surface mount device available

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

DSS

200

±30

GSS

(TO-262)

Drain Current (DC) (T

= 25°C)

D(DC)

±25

Drain Current (pulse) ^Note1

Total Power Dissipation (T

Channel Temperature

D(pulse)

±75

= 25°C)

100

°C

1.5

150

Storage Temperature

stg

−55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

(TO-263)

250

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, V^DD= 100 V, R

= 25 Ω, V^GS= 20 V→0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D13335EJ1V0DS00 (1st edition)

Date Published May 2001 NS CP (K)

Printed in Japan

1998,2001

12 3 4 5 6 7 8

中文翻译

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与2SK3112相关器件

型号	品牌	获取价格	描述	数据表
2SK3112S	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 25A I(D) \| TO-262AA
2SK3112-S	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3112-S-AZ	RENESAS	获取价格	2SK3112-S-AZ
2SK3112-Z-E1-AZ	RENESAS	获取价格	Switching N Channel MOSFET, MP-25Z, /Embossed Tape
2SK3112ZJ	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 25A I(D) \| TO-263AB
2SK3112-ZJ	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3112-ZJ-AZ	RENESAS	获取价格	2SK3112-ZJ-AZ
2SK3112-ZJ-E1-AZ	RENESAS	获取价格	2SK3112-ZJ-E1-AZ
2SK3113	TYSEMI	获取价格	Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID= 1.0 A) Avalanche capability ra
2SK3113	RENESAS	获取价格	2000mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA, TO-251, MP-3, 3 PIN