2SK3113B-ZK-E1-AY

更新时间： 2024-02-18 22:35:26

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	196K
描述
MOS FIELD EFFECT TRANSISTOR

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3113B

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching

characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low on-state resistance

R^DS(on)= 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)

• Low gate charge

Q^G= 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)

• Gate voltage rating : ±30 V

• Avalanche capability ratings

<R>

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

Tube 70 p/tube

Tube 75 p/tube

PACKAGE

2SK3113B-S15-AY ^Note

2SK3113B(1)-S27-AY ^Note

2SK3113B-ZK-E1-AY ^Note

2SK3113B-ZK-E2-AY ^Note

TO-251 (MP-3-a) typ. 0.39 g

TO-251 (MP-3-b) typ. 0.34 g

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK) typ. 0.27 g

Note Pb-free (This product does not contain Pb in external electrode.)

(TO-251)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

600

±30

±2.0

±8.0

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C) ^Note2

Channel Temperature

°C

(TO-252)

P^T2

1.0

T^ch

150

Storage Temperature

T^stg

I^AS

–55 to +150

°C

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

2.0

2.7

E^AS

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm

3. Starting T^ch= 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

2006

Document No. D18061EJ3V0DS00 (3rd edition)

Date Published June 2007 NS

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7 8

中文翻译

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与2SK3113B-ZK-E1-AY相关器件

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2SK3113B-ZK-E2-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
2SK3113-Z	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3113-Z-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-
2SK3113-Z-E1-AY	RENESAS	获取价格	2SK3113-Z-E1-AY
2SK3113-Z-E1-AZ	RENESAS	获取价格	Switching N-Channel Power Mosfet, MP-3Z, /Embossed Tape
2SK3113-Z-E2-AY	RENESAS	获取价格	2SK3113-Z-E2-AY
2SK3114	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3114-AZ	NEC	获取价格	暂无描述
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2SK3114-S12-AZ	RENESAS	获取价格	2SK3114-S12-AZ