Datasheet > 2SK3116

2SK3116

更新时间： 2024-10-02 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体栅极晶体管开关脉冲局域网
页数	文件大小	规格书
1页	75K
描述
Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)

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数据手册

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2SK3116 数据手册

SMD Type

Product specification

2SK3116

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low gate charge

Q^G= 26 nC TYP. (I^D= 7.5 A, V^DD= 450 V, V^GS= 10 V)

Gate voltage rating 30 V

Low on-state resistance

+0.1

-0.1

0.1max

1.27

R^DS(on)= 1.2

MAX. (V^GS= 10 V, I^D= 3.75 A)

+0.1

0.81

-0.1

2.54

Avalanche capability ratings

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

600

Gate to source voltage

7.5

Drain current

I^dp*

1.5

Power dissipation

T^A=25

T^C=25

P^D

Channel temperature

Storage temperature

Tch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate to source cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

Testconditons

V^DS=600V,V^GS=0

Min

Typ

Max

100

3.5

Unit

I^DSS

I^GSS

V^GS(off)

Y^fs

VGS= 30V,VDS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=3.75A

V^GS=10V,I^D=3.75A

2.5

2.0

R^DS(on)

C^iss

C^oss

Crss

t^on

0.9

1100

200

1.2

V^DS=10V,V^GS=0,f=1MHZ

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

t^r

I^D=3.75A,V^GS(on)=10V,V^DD=150V,R^G=1

,R^L=50

Turn-off delay time

t^off

Fall time

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