2SK3116-ZJ

更新时间： 2024-02-15 04:02:48

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	72K
描述
SWITCHING N-CHANNEL POWER MOS FET

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中文翻译

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数据手册

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2SK3116-ZJ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3116

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

The 2SK3116 is N-channel DMOS FET device that features a

low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power

supply, AC adapter.

PART NUMBER

2SK3116

PACKAGE

TO-220AB

TO-262

2SK3116-S

2SK3116-ZJ

TO-263

FEATURES

•Low gate charge

Q^G= 26 nC TYP. (I^D= 7.5 A, V^DD= 450 V, V^GS= 10 V)

•Gate voltage rating ±30 V

•Low on-state resistance

R^DS(on)= 1.2 Ω MAX. (V^GS= 10 V, I^D= 3.75 A)

•Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

600

±30

±7.5

±30

Drain Current (pulse) ^Note1

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^C= 25°C)

Channel Temperature

1.5

P^T2

T^ch

150

°C

Storage Temperature

T^stg

−55 to +150

7.5

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Diode Recovery dv/dt ^Note3

I^AS

E^AS

37.5

3.5

V/ns

dv/dt

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, V^DD= 150 V, R^G= 25 Ω , V^GS= 20 → 0 V

3. I^F≤ 3.0 A, V^clamp= 600 V, di/dt ≤ 100 A/ µs, T^A= 25°C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark ★ shows major revised points.

Document No. D13339EJ2V0DS00 (2nd edition)

Date Published May 2002 NS CP (K)

Printed in Japan

1998

12 3 4 5 6 7 8

中文翻译

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