2SK3114-AZ

更新时间： 2024-01-13 12:26:36

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	93K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3114-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3114

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

ORDERING INFORMATION

DESCRIPTION

The 2SK3114 is N-channel DMOS FET device that features a

low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power

supply, AC adapter.

PART NUMBER

PACKAGE

2SK3114

Isolated TO-220

FEATURES

★

(Isolated TO-220)

• Low on-state resistance:

R^DS(on)= 2.2 Ω MAX. (V^GS= 10 V, I^D= 2.0 A)

• Low gate charge:

Q^G= 15 nC TYP. (V^DD= 450 V, V^GS= 10 V, I^D= 4.0 A)

• Gate voltage rating: ±30 V

• Avalanche capability ratings

• Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

600

±30

±4.0

±16

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

°C

P^T2

2.0

T^ch

150

Storage Temperature

T^stg

–55 to +150

4.0

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

I^AS

E^AS

10.7

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

2. Starting T^ch= 25°C, V^DD= 150 V, R^G= 25 Ω, V^GS= 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published January 2001 NS CP(K)

Printed in Japan

D13337EJ2V0DS00 (2nd edition)

The mark ★ shows major revised points.

1998

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SK3114-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SK3114B-S17-AY	NEC	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal
2SK3114-S12-AZ	RENESAS	获取价格	2SK3114-S12-AZ
2SK3115	RENESAS	获取价格	6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN
2SK3115	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3115B-S17-AY	NEC	获取价格	Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal
2SK3115-S12-AZ	RENESAS	获取价格	2SK3115-S12-AZ
2SK3115-S17-AY	RENESAS	获取价格	2SK3115-S17-AY
2SK3116	RENESAS	获取价格	7.5A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
2SK3116	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET
2SK3116	KEXIN	获取价格	MOS Field Effect Transistor