是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 10 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK311 | HITACHI |
获取价格 |
SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
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2SK3110 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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2SK3111 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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2SK3111 | KEXIN |
获取价格 |
MOS Field Effect Transistor |
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2SK3111 | TYSEMI |
获取价格 |
Gate voltage rating -30 V Avalanche capability rated Surface mount device available |
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2SK3111 | RENESAS |
获取价格 |
20A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN |
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2SK3111-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met |
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2SK3111-S | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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2SK3111-Z-E2-AZ | RENESAS |
获取价格 |
2SK3111-Z-E2-AZ |
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2SK3111-ZJ | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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