Datasheet > 2SK3112

2SK3112

更新时间： 2024-01-16 12:56:10

品牌	Logo	应用领域
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页数	文件大小	规格书
1页	46K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SK3112 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SK3112 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SK3112

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

Gate voltage rating 30 V

Low on-state resistance

+0.1

1.27

-0.1

RDS(on) = 110m MAX. (VGS = 10 V, ID = 13A)

Low input capacitance

+0.1

-0.1

0.1max

1.27

C^iss= 1600 pF TYP. (VDS = 10 V, VGS = 0 V)

Avalanche capability rated

+0.1

0.81

-0.1

2.54

Built-in gate protection diode

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Surface mount device available

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

200

Gate to source voltage

Drain current

I^dp*

100

1.5

150

Power dissipation

T^C=25

T^A=25

P^D

Channel temperature

Storage temperature

T^ch

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate to source cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

Testconditons

VDS=200V,VGS=0

Min

Typ

Max

100

Unit

I^DSS

I^GSS

V^GS(off)

Yfs

VGS= 30V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=13A

VGS=10V,ID=13A

2.5

6.0

4.5

R^DS(on)

Ciss

C^oss

C^rss

t^on

1600

430

280

110

VDS=10V,VGS=0,f=1MHZ

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

t^r

140

110

I^D=13A,VGS(on)=10V,VDD=100V,RG=10

Turn-off delay time

t^off

Fall time

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与2SK3112相关器件

型号	品牌	获取价格	描述	数据表
2SK3112S	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 25A I(D) \| TO-262AA
2SK3112-S	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3112-S-AZ	RENESAS	获取价格	2SK3112-S-AZ
2SK3112-Z-E1-AZ	RENESAS	获取价格	Switching N Channel MOSFET, MP-25Z, /Embossed Tape
2SK3112ZJ	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 25A I(D) \| TO-263AB
2SK3112-ZJ	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3112-ZJ-AZ	RENESAS	获取价格	2SK3112-ZJ-AZ
2SK3112-ZJ-E1-AZ	RENESAS	获取价格	2SK3112-ZJ-E1-AZ
2SK3113	TYSEMI	获取价格	Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID= 1.0 A) Avalanche capability ra
2SK3113	RENESAS	获取价格	2000mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA, TO-251, MP-3, 3 PIN