Datasheet > 2SK2745(F)

2SK2745(F)

更新时间： 2024-11-24 19:55:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	415K
描述
MOSFET N-CH 50V 50A 2-16C1B

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中文翻译

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技术参数
数据手册

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2SK2745(F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

2SK2745(F) 数据手册

2SK2745

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2745

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z 4-V gate drive

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 7.0 mΩ (typ.)

DS (ON)

: |Y | = 50 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 50 V)

DSS

: V = 0.8 to 2.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

1. GATE

DC (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain current

Pulse (Note 1)

200

150

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

747

(Note 2)

―

Avalanche current

TOSHIBA

2-16C1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 368 μH, R = 25 Ω, I = 50 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK2745(F)相关器件

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