2SK2750
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2750
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance
z High forward transfer admittance
: R
= 1.7 Ω (typ.)
DS (ON)
: |Y | = 3.0 S (typ.)
fs
z Low leakage current : I
= 100 μA (max) (V
= 600 V)
DSS
DS
z Enhancement mode : V = 2.0~4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
600
600
±30
3.5
14
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
V
GSS
DC (Note 1)
I
A
D
Drain current
Pulse (Note 1)
I
A
DP
Drain power dissipation (Tc = 25°C)
P
35
W
D
AS
AR
Single pulse avalanche energy
E
201
mJ
(Note 2)
JEDEC
—
Avalanche current
I
3.5
3.5
A
JEITA
SC-67
2-10R1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
TOSHIBA
Weight: 1.9 g (typ.)
T
ch
150
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
3.57
62.5
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 28.8 mH, R = 25 Ω, I = 3.5 A
AR
V
DD
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-11-08