Datasheet > 2SK2760-01R

2SK2760-01R

更新时间： 2024-11-19 23:20:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	302K
描述
STD MOSFET

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数据手册

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2SK2760-01R 数据手册

N-channel MOS-FET

2SK2760-01

FAP-IIS Series

600V 1,2W

60W

> Features

> Outline Drawing

- High Speed Switching

- Low On-Resistance

- No Secondary Breakdown

- Low Driving Power

- High Voltage

- VGS = ± 30V Guarantee

- Repetitive Avalanche Rated

> Applications

- Switching Regulators

- UPS

- DC-DC converters

- General Purpose Power Amplifier

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

600

Continous Drain Current

Pulsed Drain Current

D(puls)

Gate-Source-Voltage

±30

117,6

Repetitive or Non-Repetitive (T_ch£ 150°C)

Avalanche Energy

°C

Max. Power Dissipation

Operating and Storage Temperature Range

150

-55 ~ +150

stg

Electrical Characteristics (T_C=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

600

Typ.

4,0

Max.

Unit

I_D=1mA

V_DS=600V

V_GS=0V

V_GS=±30V

I_D=4A

V_GS=0V

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

(BR)DSS

V_DS=V_GS

T_ch=25°C

T_ch=125°C

V_DS=0V

3,5

4,5

500

1,0

GS(th)

0,2

µA

DSS

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

100

1,2

GSS

V_GS=10V

V_DS=25V

1,0

DS(on)

I_D=4A

2,5

V_DS=25V

900

150

1400

230

110

iss

V_GS=0V

f=1MHz

V_CC=300V

I_D=9A

Output Capacitance

oss

Reverse Transfer Capacitance

Turn-On-Time t_on(t_on=t_d(on)+t_r)

rss

d(on)

110

Turn-Off-Time t_off(t_on=t_d(off)+t_f)

V_GS=10V

R_GS=10 W

d(off)

T_ch=25°C

Avalanche Capability

L = 100µH

I_F=2xI_DRV_GS=0V T_ch=25°C

I_F=I_DRV_GS=0V

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

1,0

550

7,0

1,50

µC

-dI_F/dt=100A/µs T_ch=25°C

Thermal Characteristics

Item

Symbol

Test conditions

channel to air

Min.

Typ.

Max.

Unit

°C/W

Thermal Resistance

th(ch-a)

channel to case

2,08

th(ch-c)

FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

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