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2SK2758-01S PDF预览

2SK2758-01S

更新时间: 2024-11-05 22:52:55
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 288K
描述
N-channel MOS-FET

2SK2758-01S 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G3
针数:3Reach Compliance Code:unknown
风险等级:5.37Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):163 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:0.9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2758-01S 数据手册

 浏览型号2SK2758-01S的Datasheet PDF文件第2页 
N-channel MOS-FET  
2SK2758-01L,S  
FAP-IIS Series  
500V 0,9W 10A  
80W  
> Features  
> Outline Drawing  
- High Speed Switching  
- Low On-Resistance  
- No Secondary Breakdown  
- Low Driving Power  
- High Voltage  
- VGS = ± 30V Guarantee  
- Repetitive Avalanche Rated  
> Applications  
- Switching Regulators  
- UPS  
- DC-DC converters  
- General Purpose Power Amplifier  
> Maximum Ratings and Characteristics  
> Equivalent Circuit  
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified  
Item  
Symbol  
Rating  
Unit  
V
Drain-Source-Voltage  
V
500  
DS  
Continous Drain Current  
Pulsed Drain Current  
I
10  
A
D
I
40  
±30  
A
D(puls)  
Gate-Source-Voltage  
V
V
GS  
I
10  
A
Repetitive or Non-Repetitive (Tch £ 150°C)  
Avalanche Energy  
AR  
E
163  
mJ  
W
°C  
°C  
AS  
Max. Power Dissipation  
Operating and Storage Temperature Range  
P
80  
D
T
150  
ch  
T
-55 ~ +150  
stg  
Electrical Characteristics (TC=25°C), unless otherwise specified  
-
Item  
Symbol  
Test conditions  
Min.  
500  
Typ.  
4,0  
Max.  
Unit  
V
ID=1mA  
ID=1mA  
VDS=500V  
VGS=0V  
VGS=±30V  
ID=5A  
VGS=0V  
Drain-Source Breakdown-Voltage  
Gate Threshhold Voltage  
Zero Gate Voltage Drain Current  
V
(BR)DSS  
VDS=VGS  
Tch=25°C  
Tch=125°C  
VDS=0V  
V
3,5  
4,5  
500  
1,0  
V
GS(th)  
I
10  
0,2  
10  
µA  
mA  
nA  
W
DSS  
Gate Source Leakage Current  
Drain Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
I
100  
0,9  
GSS  
VGS=10V  
VDS=25V  
R
0,73  
5
DS(on)  
ID=5A  
g
2,5  
S
fs  
VDS=25V  
C
950  
180  
80  
1450  
270  
120  
40  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
A
iss  
VGS=0V  
f=1MHz  
VCC=300V  
ID=10A  
Output Capacitance  
C
oss  
Reverse Transfer Capacitance  
Turn-On-Time ton (ton=td(on)+tr)  
C
rss  
t
25  
d(on)  
t
70  
110  
110  
70  
r
Turn-Off-Time toff (ton=td(off)+tf)  
VGS=10V  
RGS=10 W  
t
70  
d(off)  
t
45  
f
Tch=25°C  
Avalanche Capability  
I
L = 100µH  
10  
AV  
IF=2xIDR VGS=0V Tch=25°C  
IF=IDR VGS=0V  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
1,1  
450  
5,5  
1,65  
V
SD  
t
ns  
µC  
rr  
-dIF/dt=100A/µs Tch=25°C  
Q
rr  
-
Thermal Characteristics  
Item  
Symbol  
Test conditions  
channel to air  
Min.  
Typ.  
Max.  
75  
Unit  
°C/W  
°C/W  
Thermal Resistance  
R
th(ch-a)  
R
channel to case  
1,56  
th(ch-c)  
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56  
 

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