2SK2751

更新时间： 2024-09-15 22:52:55

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	33K
描述
Silicon N-Channel Junction FET

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中文翻译

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数据手册

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2SK2751 数据手册

Silicon Junction FETs (Small Signal)

2SK2751

Silicon N-Channel Junction FET

For impedance conversion in low frequency

For pyroelectric sensor

unit: mm

2.8 –⁺0⁰.^.3²

1.5 –⁺0⁰.^.0²5⁵

0.65±0.15

■ Features

● Low noise-figure (NF)

● High gate to drain voltage V_GDO

● Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

0.1 to 0.3

0.4±0.2

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Gate to Drain voltage

Drain current

Symbol

V_GDS

I_D

Ratings

Unit

−40

1: Source

2: Drain

3: Gate

JEDEC: TO-236

EIAJ: SC-59

Mini Type Package (3-pin)

°C

Gate current

I_G

200

Marking Symbol: HS

Allowable power dissipation

Channel temperature

Storage temperature

P_D

T_ch

150

T_stg

−55 to +150

°C

■ Electrical Characteristics (Ta = 25 ± 3°C)

Parameter

Symbol

I_DSS

Conditions

min

typ

max

4.7

Unit

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

V_DS= 10V, V_GS= 0

1.4

I_GSS

V_GS= −20V, V_DS= 0

−1

V_GDS

V_GSC

| Y_fs|

I_G= −100µA, V_DS= 0

V_DS= 10V, I_D= 1µA

−40

Gate to Source cut-off voltage

Forward transfer admittance

−3.5

V_DS= 10V, I_D= 1µA, f = 1kHz

2.5

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

V_DS= 10V, V_GS= 0, f = 1MHz

Note: The test method to comply with JISC7030, Field effect transistor test method.

中文翻译

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