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2SK2753-01 PDF预览

2SK2753-01

更新时间: 2024-11-23 22:52:55
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富士电机 - FUJI /
页数 文件大小 规格书
2页 176K
描述
N-channel MOS-FET

2SK2753-01 数据手册

 浏览型号2SK2753-01的Datasheet PDF文件第2页 
N-channel MOS-FET  
2SK2753-01  
32mW  
±50A 150W  
FAP-IIS Series  
120V  
> Features  
> Outline Drawing  
- High Speed Switching  
- Low On-Resistance  
- No Secondary Breakdown  
- Low Driving Power  
- High Voltage  
- VGS = ± 30V Guarantee  
- Repetitive Avalanche Rated  
> Applications  
- Switching Regulators  
- UPS  
- DC-DC converters  
- General Purpose Power Amplifier  
> Maximum Ratings and Characteristics  
> Equivalent Circuit  
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified  
Item  
Symbol  
Rating  
Unit  
Drain-Source-Voltage  
Drain-gate-Voltage  
V
120  
V
DS  
V
120  
±50  
DGR  
Continous Drain Current  
Pulsed Drain Current  
Gate-Source-Voltage  
Max. Power Dissipation  
Operating and Storage Temperature Range  
I
A
A
D
I
±200  
D(puls)  
V
±30  
V
GS  
P
150  
W
°C  
°C  
D
T
150  
ch  
T
-55 ~ +150  
stg  
Electrical Characteristics (TC=25°C), unless otherwise specified  
-
Item  
Symbol  
Test conditions  
Min.  
120  
Typ.  
3,0  
Max.  
Unit  
V
ID=1mA  
ID=10mA  
VDS=120V  
VGS=0V  
VGS=±30V  
ID25A  
VGS=0V  
Drain-Source Breakdown-Voltage  
Gate Threshhold Voltage  
Zero Gate Voltage Drain Current  
BV  
DSS  
VDS=VGS  
Tch=25°C  
Tch=125°C  
VDS=0V  
V
I
2,5  
3,5  
500  
1,0  
100  
32  
V
GS(th)  
DSS  
10  
0,2  
µA  
mA  
nA  
mW  
S
Gate Source Leakage Current  
Drain Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
I
R
g
C
C
C
t
10  
GSS  
DS(on)  
fs  
VGS=10V  
VDS=25V  
24  
ID=25A  
25  
50  
VDS=25V  
4250  
820  
250  
30  
6400  
1200  
370  
45  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
A
iss  
VGS=0V  
f=1MHz  
VCC=50V  
ID=50A  
Output Capacitance  
oss  
rss  
d(on)  
r
Reverse Transfer Capacitance  
Turn-On-Time ton (ton=td(on)+tr)  
t
160  
150  
140  
240  
230  
210  
Turn-Off-Time toff (ton=td(off)+tf)  
VGS=10V  
t
d(off)  
f
R
GS=10 W  
Tch=25°C  
t
Avalanche Capability  
I
L = 100µH  
50  
AV  
SD  
rr  
IF=2xIDR VGS=0V Tch=25°C  
IF=IDR VGS=0V  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
t
1,3  
150  
1,1  
2,0  
V
ns  
µC  
-dIF/dt=100A/µs Tch=25°C  
Q
rr  
-
Thermal Characteristics  
Item  
Symbol  
Test conditions  
channel to case  
channel to air  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance  
R
0,833  
°C/W  
th(ch-c)  
th(ch-a)  
R
35 °C/W  
 

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