N-channel MOS-FET
32mW
±50A 150W
FAP-IIS Series
120V
> Features
> Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
Drain-gate-Voltage
V
120
V
DS
V
120
±50
DGR
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
I
A
A
D
I
±200
D(puls)
V
±30
V
GS
P
150
W
°C
°C
D
T
150
ch
T
-55 ~ +150
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
120
Typ.
3,0
Max.
Unit
V
ID=1mA
ID=10mA
VDS=120V
VGS=0V
VGS=±30V
ID25A
VGS=0V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
BV
DSS
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
V
I
2,5
3,5
500
1,0
100
32
V
GS(th)
DSS
10
0,2
µA
mA
nA
mW
S
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
I
R
g
C
C
C
t
10
GSS
DS(on)
fs
VGS=10V
VDS=25V
24
ID=25A
25
50
VDS=25V
4250
820
250
30
6400
1200
370
45
pF
pF
pF
ns
ns
ns
ns
A
iss
VGS=0V
f=1MHz
VCC=50V
ID=50A
Output Capacitance
oss
rss
d(on)
r
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
t
160
150
140
240
230
210
Turn-Off-Time toff (ton=td(off)+tf)
VGS=10V
t
d(off)
f
R
GS=10 W
Tch=25°C
t
Avalanche Capability
I
L = 100µH
50
AV
SD
rr
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
t
1,3
150
1,1
2,0
V
ns
µC
-dIF/dt=100A/µs Tch=25°C
Q
rr
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to case
channel to air
Min.
Typ.
Max.
Unit
Thermal Resistance
R
0,833
°C/W
th(ch-c)
th(ch-a)
R
35 °C/W