Datasheet > 2SK2749_06

2SK2749_06

更新时间： 2024-11-06 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	711K
描述
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SK2749_06 数据手册

2SK2749

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2749

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.6 Ω (typ.)

DS (ON)

: |Y | = 5.0 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 720 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

1. GATE

Drain current

Pulse (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain power dissipation (Tc = 25°C)

150

Single pulse avalanche energy

682

JEDEC

JEITA

―

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-16C1B

150

Weight: 4.6 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

0.833

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 25.5 mH, I = 7 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-10

12 3 4 5 6

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