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2SK2745_09 PDF预览

2SK2745_09

更新时间: 2024-09-15 07:32:23
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器电机驱动DC-DC转换器
页数 文件大小 规格书
6页 421K
描述
Chopper Regulator, DC−DC Converter and Motor Drive Applications

2SK2745_09 数据手册

 浏览型号2SK2745_09的Datasheet PDF文件第2页浏览型号2SK2745_09的Datasheet PDF文件第3页浏览型号2SK2745_09的Datasheet PDF文件第4页浏览型号2SK2745_09的Datasheet PDF文件第5页浏览型号2SK2745_09的Datasheet PDF文件第6页 
2SK2745  
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)  
2SK2745  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z 4-V gate drive  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 7.0 m(typ.)  
DS (ON)  
: |Y | = 50 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 50 V)  
DSS  
DS  
: V = 0.8 to 2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
50  
50  
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
±20  
50  
V
GSS  
1. GATE  
DC (Note 1)  
I
A
D
2. DRAIN (HEAT SINK)  
3. SOURCE  
Drain current  
Pulse (Note 1)  
I
200  
150  
A
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
W
D
AS  
AR  
JEDEC  
JEITA  
E
747  
mJ  
(Note 2)  
Avalanche current  
I
50  
15  
A
TOSHIBA  
2-16C1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 4.6 g (typ.)  
T
ch  
150  
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
0.833  
50  
°C / W  
°C / W  
th (chc)  
R
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 368 μH, R = 25 , I = 50 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  

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