2SK2745(Q)

更新时间： 2024-11-05 13:00:19

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动 DC-DC转换器局域网
页数	文件大小	规格书
6页	421K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK2745(Q) 数据手册

2SK2745

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2745

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z 4-V gate drive

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 7.0 mΩ (typ.)

DS (ON)

: |Y | = 50 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 50 V)

DSS

: V = 0.8 to 2.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

1. GATE

DC (Note 1)

2. DRAIN (HEAT SINK)

3. SOURCE

Drain current

Pulse (Note 1)

200

150

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

747

(Note 2)

―

Avalanche current

TOSHIBA

2-16C1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 368 μH, R = 25 Ω, I = 50 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

下载PDF

与2SK2745(Q)相关器件

型号	品牌	获取价格	描述	数据表
2SK2745_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2745_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2746	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHNG, DC-DC CONVERTER AND MOTOR DRIVE AP
2SK2746_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications
2SK2746_09	TOSHIBA	获取价格	DC−DC Converter and Motor Drive Applications
2SK2747	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 500MA I(D) \| TO-236AB
2SK2748	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 2A I(D) \| SOT-89
2SK2749	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2749_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2749_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications

与2SK2745(Q)相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

10
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2745(Q)

2SK2745(Q) 数据手册

与2SK2745(Q)相关器件

与2SK2745(Q)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2745(Q)

2SK2745(Q) 数据手册

与2SK2745(Q)相关器件

与2SK2745(Q)相关文章

您还可以找

您在本页遇到什么问题？