Datasheet > 2SK2267_09

2SK2267_09

更新时间： 2024-09-21 07:32:19

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	429K
描述
Chopper Regulator, DC−DC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK2267_09 数据手册

2SK2267

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2267

Chopper Regulator, DC−DC Converter and Motor Drive

Unit: mm

Applications

z 4-V gate drive

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 8 mΩ (typ.)

DS (ON)

: |Y | = 60 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 60 V)

DSS

: V = 0.8 to 2.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Drain current

JEDEC

JEITA

―

Pulse (Note 1)

240

150

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

TOSHIBA

2-21F1B

1054

(Note 2)

Weight: 9.75 g (typ.)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

35.7

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 398 μH, R = 25 Ω, I = 60 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-12-09

12 3 4 5 6

中文翻译

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与2SK2267_09相关器件

型号	品牌	获取价格	描述	数据表
2SK2268	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 15V V(BR)DSS \| 30MA I(D) \| SC-70
2SK2269	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 15V V(BR)DSS \| 30MA I(D) \| TO-236AB
2SK2269(WJ)TB	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Meta
2SK227	HITACHI	获取价格	SILICON N-CHANNEL ENHANCEMENT MOSFET
2SK2270	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 15V V(BR)DSS \| 30MA I(D) \| SPAK
2SK2270AC	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Meta
2SK2270AP	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Meta
2SK2272-01R	FUJI	获取价格	N-channel MOS-FET
2SK2273	SANYO	获取价格	Very High-Speed Switching Applications
2SK2274	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER

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