是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Lifetime Buy | 零件包装代码: | SC-59 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.18 | Is Samacsys: | N |
配置: | SINGLE | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 0.65 pF | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.1 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK210_07 | TOSHIBA |
获取价格 |
Silicon N Channel Junction Type FM Tuner Applications | |
2SK2100-01MR | FUJI |
获取价格 |
Power MOSFET | |
2SK2101-01MR | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2102 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 200MA I(D) | SIP | |
2SK2103 | ROHM |
获取价格 |
Small switching (30V, 2A) | |
2SK2103T100 | ROHM |
获取价格 |
Small switching (30V, 2A) | |
2SK2103T101 | ROHM |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
2SK2104 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-221VAR | |
2SK2104TL | ROHM |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
2SK2105 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2A I(D) | TO-252VAR |