是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.82 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 2 A |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 2 W | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Copper (Sn/Cu) |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK2103T100 | ROHM |
功能相似 |
Small switching (30V, 2A) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2103T100 | ROHM |
获取价格 |
Small switching (30V, 2A) | |
2SK2103T101 | ROHM |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
2SK2104 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-221VAR | |
2SK2104TL | ROHM |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
2SK2105 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2A I(D) | TO-252VAR | |
2SK2105F5 | ROHM |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2SK2105TL | ROHM |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2SK2107 | TOSHIBA |
获取价格 |
TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2107TE24R | TOSHIBA |
获取价格 |
TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2108 | SANYO |
获取价格 |
Very High-Speed Switching Applications |