是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.83 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 2 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e2 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 2 W |
最大脉冲漏极电流 (IDM): | 8 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN COPPER |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2104 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-221VAR | |
2SK2104TL | ROHM |
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Power Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
2SK2105 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2A I(D) | TO-252VAR | |
2SK2105F5 | ROHM |
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Power Field-Effect Transistor, 2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2SK2105TL | ROHM |
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Power Field-Effect Transistor, 2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide S | |
2SK2107 | TOSHIBA |
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TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2107TE24R | TOSHIBA |
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TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2108 | SANYO |
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Very High-Speed Switching Applications | |
2SK2109 | NEC |
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N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
2SK2109 | KEXIN |
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MOS Field Effect Transistor |