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2SJ486ZU-TR-E PDF预览

2SJ486ZU-TR-E

更新时间: 2024-01-30 22:47:47
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管开关光电二极管ISM频段
页数 文件大小 规格书
7页 79K
描述
Silicon P Channel MOS FET

2SJ486ZU-TR-E 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.28配置:SINGLE
最小漏源击穿电压:30 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ486ZU-TR-E 数据手册

 浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第1页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第2页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第3页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第5页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第6页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第7页 
2SJ486  
Static Drain to Source on State Resistance  
vs. Temperature  
Forward Transfer Admittance vs.  
Drain Current  
5
2.0  
VDS = –10 V  
Pulse Test  
Pulse Test  
2
1
1.4  
1.2  
0.8  
0.4  
0
Tc = –25°C  
ID = –0.1 A, –0.2 A  
25°C  
0.5  
VGS = –2.5 V  
75°C  
0.2  
0.1  
–0.1 A, –0.2 A  
–4 V  
0.05  
–40  
0
40  
80  
120  
160  
–0.01 –0.02 –0.05 –0.1 –0.2  
–0.5 –1  
Case Temperature Tc (°C)  
Drain Current ID (A)  
Typical Capacitance vs.  
Drain to Source Voltage  
Switching Characteristics  
10000  
1000  
300  
3000  
1000  
t
d(off)  
100  
Coss  
Ciss  
t
f
30  
10  
300  
100  
t
r
t
d(on)  
Crss  
3
1
30  
10  
VGS = –4 V, VDD = –10 V  
PW = 5 µs, duty 1 %  
VGS = 0  
f = 1 MHz  
0
–4  
–8  
–12  
–16  
–20  
–0.05  
–0.1  
–0.2  
–0.5  
–1  
Drain to Source Voltage VDS (V)  
Drain Current ID (A)  
Reverse Drain Current vs.  
Source to Drain Voltage  
–1.0  
–0.8  
–0.6  
–0.4  
–0.2  
0
Pulse Test  
5 V  
VGS = 0, 5 V  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
Source to Drain Voltage VSD (V)  
Rev.3.00 Sep 07, 2005 page 4 of 6  

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