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2SD874A-S-TP-HF PDF预览

2SD874A-S-TP-HF

更新时间: 2024-11-05 18:02:03
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 238K
描述
Small Signal Bipolar Transistor,

2SD874A-S-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2SD874A-S-TP-HF 数据手册

 浏览型号2SD874A-S-TP-HF的Datasheet PDF文件第2页 
M C C  
2SD874A-Q  
2SD874A-R  
2SD874A-S  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
·
Halogen free available upon request by adding suffix "-HF"  
Power amplifier applications  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
NPN Silicon  
Power Transistors  
·
·
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
50  
60  
5
1
500  
-55 to +150  
Unit  
V
V
V
A
SOT-89  
A
PC  
TJ  
Collector power dissipation  
Junction Temperature  
mW  
R
K
B
TSTG  
Storage Temperature  
-55 to +150  
R
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
E
C
Symbol  
Parameter  
Min  
Type  
Max  
Units  
OFF CHARACTERISTICS  
D
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IC=2mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=10uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10uAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=20Vdc,IE=0)  
50  
60  
5
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
G
H
J
F
---  
Vdc  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
IEBO  
Emitter-Base Cutoff Current  
(VEB=4Vdc, IC=0)  
1
2
3
ON CHARACTERISTICS  
1. Base  
hFE  
Forward Current Transfer ratio  
(IC=500mAdc, VCE=10Vdc)  
(IC=1.0Adc, VCE=5Vdc)  
Collector-Emitter Saturation Voltage  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Saturation Voltage  
(IC=500mAdc,IB=50mAdc)  
2. Collector  
3. Emitter  
85  
50  
---  
---  
---  
---  
340  
---  
0.4  
---  
---  
Vdc  
VCE(sat)  
VBE(sat)  
fT  
---  
---  
---  
---  
200  
20  
1.2  
---  
Vdc  
MHz  
pF  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
Transistor Frequency  
ꢀꢁꢂꢆ  
ꢁꢄꢇꢈꢃꢅꢆ  
ꢂꢉꢊꢆ  
ꢂꢂꢆ  
ꢄꢋꢌꢃꢅꢆ  
(IC=50mAdc, VCE=10Vdc, f=200MHz)  
Collector Output Capacitance  
(VCB=10Vdc, IE=0, f=1MHz)  
ꢂꢁꢄꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢕꢔꢐꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢂꢁꢄꢆ  
ꢒꢍꢐꢓꢆ  
ꢎꢍꢔꢕꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢂꢉꢊꢆ  
ꢒꢍꢔꢕꢆ  
ꢎꢍꢑꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
Cob  
---  
ꢉꢆ  
ꢖꢆ  
ꢇꢆ  
ꢀꢆ  
ꢃꢆ  
ꢙꢆ  
ꢝꢆ  
ꢈꢆ  
ꢞꢆ  
ꢍꢎꢑꢎꢆ  
ꢍꢕꢏꢎꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
Classification OF hFE(1)  
Rank  
Range  
Marking  
Q
R
S
ꢌꢛꢜꢆ  
85-170  
YQ  
120-240  
YR  
170-340  
YS  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
 ꢆ  
www.mccsemi.com  
1 of 2  
Revision: B  
2013/01/01  

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