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2SD874Q PDF预览

2SD874Q

更新时间: 2024-09-24 20:53:43
品牌 Logo 应用领域
美微科 - MCC 放大器晶体管
页数 文件大小 规格书
2页 639K
描述
1000mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3

2SD874Q 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliant风险等级:5.76
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):85JESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SD874Q 数据手册

 浏览型号2SD874Q的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
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TM  
2SD874  
Micro Commercial Components  
Features  
With SOT-89 package  
Power amplifier applications  
NPN Silicon  
Case Material: Molded Plastic. UL Flammability  
Power Transistors  
Classification Rating 94V-0  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
25  
30  
5
Unit  
V
V
V
A
SOT-89  
1
PC  
TJ  
Collector power dissipation  
Junction Temperature  
500  
-55 to +150  
mW  
A
K
B
TSTG  
Storage Temperature  
-55 to +150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
E
Symbol  
Parameter  
Min  
Type  
Max  
Units  
C
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IC=2mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=10uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10uAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=20Vdc,IE=0)  
25  
30  
5
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
D
G
H
J
F
2
---  
Vdc  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
IEBO  
Emitter-Base Cutoff Current  
(VEB=4Vdc, IC=0)  
1
3
ON CHARACTERISTICS  
1. Base  
hFE  
Forward Current Transfer ratio  
(IC=500mAdc, VCE=10Vdc)  
(IC=1.0Adc, VCE=5Vdc)  
Collector-Emitter Saturation Voltage  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Saturation Voltage  
(IC=500mAdc,IB=50mAdc)  
2. Collector  
3. Emitter  
85  
50  
---  
---  
---  
---  
340  
---  
0.4  
---  
---  
Vdc  
VCE(sat)  
VBE(sat)  
fT  
---  
---  
---  
---  
200  
20  
1.2  
---  
Vdc  
MHz  
pF  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
Transistor Frequency  
ꢀꢁꢂꢆ  
ꢁꢄꢇꢈꢃꢅꢆ  
ꢂꢂꢆ  
ꢄꢋꢌꢃꢅꢆ  
(IC=50mAdc, VCE=10Vdc, f=200MHz)  
Collector Output Capacitance  
(VCB=10Vdc, IE=0, f=1MHz)  
ꢂꢁꢄꢆ  
ꢂꢉꢊꢆ  
ꢂꢁꢄꢆ  
ꢒꢍꢐꢓꢆ  
ꢎꢍꢔꢕꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢂꢉꢊꢆ  
ꢒꢍꢔꢕꢆ  
ꢎꢍꢑꢕꢆ  
ꢒꢍꢎꢓꢆ  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
Cob  
---  
ꢉꢆ  
ꢖꢆ  
ꢇꢆ  
ꢀꢆ  
ꢃꢆ  
ꢙꢆ  
ꢝꢆ  
ꢈꢆ  
ꢞꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢕꢔꢐꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢍꢎꢑꢎꢆ  
ꢍꢕꢏꢎꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
Classification OF hFE(1)  
Rank  
Range  
Marking  
Q
R
120-240  
ZR  
S
170-340  
ZS  
ꢌꢛꢜꢆ  
85-170  
ZQ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
 ꢆ  
www.mccsemi.com  
1 of 2  
Revision: 2  
2006/05/14  

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