Transistor
2SD0875 (2SD875)
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB0767 (2SB767)
Unit: mm
1.5 0.1
4.5 0.1
1.6 0.2
Features
Large collector power dissipation PC.
High collector to emitter voltage VCEO
I
G
G
.
45°
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
0.4 0.08
0.4 0.04
0.5 0.08
1.5 0.1
3.0 0.15
2
Absolute Maximum Ratings (Ta=25˚C)
I
3
1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
80
marking
80
V
5
V
1
A
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
IC
0.5
1
A
*
Collector power dissipation
Junction temperature
Storage temperature
PC
W
˚C
˚C
Marking symbol : X
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
VCB = 20V, IE = 0
min
typ
max
Unit
µA
V
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
0.1
VCBO
VCEO
VEBO
IC = 10µA, IE = 0
80
80
5
IC = 100µA, IB = 0
V
IE = 10µA, IC = 0
V
VCE = 10V, IC = 150mA*2
VCE = 5V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
VCB = 10V, IE = –50mA*2, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
130
50
330
*1
hFE1
hFE2
Forward current transfer ratio
100
0.2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
0.4
1.2
V
V
0.85
120
11
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
*2 Pulse measurement
*1
h
FE1
Rank classification
Rank
hFE1
R
S
130 ~ 220
XR
185 ~ 330
XS
Marking Symbol
Note.) The Part number in the Parenthesis shows conventional
part number.
1