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2SD875R PDF预览

2SD875R

更新时间: 2024-09-24 23:20:35
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 66K
描述
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-243

2SD875R 数据手册

 浏览型号2SD875R的Datasheet PDF文件第2页浏览型号2SD875R的Datasheet PDF文件第3页 
Transistor  
2SD0875 (2SD875)  
Silicon NPN epitaxial planer type  
For low-frequency power amplification  
Complementary to 2SB0767 (2SB767)  
Unit: mm  
1.5 0.1  
4.5 0.1  
1.6 0.2  
Features  
Large collector power dissipation PC.  
High collector to emitter voltage VCEO  
I
G
G
.
45°  
G
Mini Power type package, allowing downsizing of the equipment  
and automatic insertion through the tape packing and the maga-  
zine packing.  
0.4 0.08  
0.4 0.04  
0.5 0.08  
1.5 0.1  
3.0 0.15  
2
Absolute Maximum Ratings (Ta=25˚C)  
I
3
1
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
marking  
80  
V
5
V
1
A
1:Base  
2:Collector  
3:Emitter  
EIAJ:SC–62  
Mini Power Type Package  
IC  
0.5  
1
A
*
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
W
˚C  
˚C  
Marking symbol : X  
Tj  
150  
Tstg  
–55 ~ +150  
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
ICBO  
Conditions  
VCB = 20V, IE = 0  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
0.1  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
80  
80  
5
IC = 100µA, IB = 0  
V
IE = 10µA, IC = 0  
V
VCE = 10V, IC = 150mA*2  
VCE = 5V, IC = 500mA*2  
IC = 300mA, IB = 30mA*2  
IC = 300mA, IB = 30mA*2  
VCB = 10V, IE = –50mA*2, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
130  
50  
330  
*1  
hFE1  
hFE2  
Forward current transfer ratio  
100  
0.2  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
0.4  
1.2  
V
V
0.85  
120  
11  
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
*2 Pulse measurement  
*1  
h
FE1  
Rank classification  
Rank  
hFE1  
R
S
130 ~ 220  
XR  
185 ~ 330  
XS  
Marking Symbol  
Note.) The Part number in the Parenthesis shows conventional  
part number.  
1

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